#ifndef _Dioda
#define _Dioda

//////////////////////////////////////////////////////////////////////////
//                                                                      //
// Dioda                                                                //
//                                                                      //
// Description of the Diode                                             //
//                                                                      //
//////////////////////////////////////////////////////////////////////////

#include "fizika.h"
#include "TObject.h"
#include "TH1.h"
#include "TMath.h"
#include "TRandom.h"
#include "TArray.h"
#include "TArrayI.h"
#include "TArrayF.h"
#include "TGraph.h"
#include "EField.h"
#include <stdio.h>
#include <stdlib.h>
#include "DStruct.h"
#include "TMinuit.h"
#include "Trap.h"
#include "Elec.h"
Double_t laser(Double_t *, Double_t *);

class Dioda : public TObject {

private:
   Int_t          nx;  //Width Of The Doide
   Int_t          ny;  //Thickness Of The Doide
   Float_t        Voltage; //Voltage
   TF1            *Neff; //effective dopping concentration 
//Other Variables
   TRandom *ran;
//Runge Kutta method for solving the filed
   void           rk4(float *,float *,int,float,float,float*); 
  Float_t        rtbis(float, float, float);
  Float_t        PoEqSolve(Float_t);
  Float_t        dEX(Double_t ,Double_t *, Double_t *,Double_t=0.5);
  Double_t       dEdx(Double_t);
public:
   EField Real;      //electric field 
   EField Ramo;      //weighting field 
   TArrayF PhyPot;   //electric potential
   TArrayF PhyField; //electric field 
   TH1F *pos;        // contribution of the holes to the total drift current
   TH1F *neg;        // contribution of the electrons  to the total drift current
   TH1F *sum;        // total drift current
   Trap *et;         // Trapping for electrons
   Trap *ht;         // Trapping for holes

   Int_t udregion;
   Int_t diff;          // Diffusion simulation (yes=1, no=0)
   Int_t MobMod;          // Mobility Model
   Int_t average;       // Average (over how many events)
   Float_t Temperature; // Temperature
   Int_t trapping;      // Trapping simulation (yes=1, no=0)
   Float_t B;	        // Magnetic field;
   Int_t material;      // material index - material=0 silicon, material = 1 diamond
   //Multiplication GK 14102008
   Int_t Multiplication;

  //TArrayD PhyPot2D;
  //TArrayF RamoPot;
  // TArrayF RamoField;
  // TArrayD RamoPot2D;
   Dioda(TF1 *,Float_t=50,Int_t=50,Int_t=301);
   ~Dioda();
   TGraph   *Draw(char*);
   void    GetField();
   void    GetField(TF1 *);
   void    GetRamoField();
   void    GetRamoField(TH1F *rf);
   void    SetVoltage(Float_t V) {Voltage=V; GetField();};
   void    ResetRnd(Int_t seed) {delete ran; ran=new TRandom(seed);};
  //void Minimize(Int_t , Double_t *, Double_t *);
  // void fcn(Int_t &, Double_t *, Double_t &, Double_t *, Int_t );
 
  // DRIFT SECTION OF THE PROGRAM
  void  Drift(Double_t sx, Double_t sy, Float_t charg, DStruct *seg, Int_t =0,Float_t=0);
  void  MipIR(Float_t *, Float_t *, Int_t);
  void  LaserV(Float_t *, Float_t *, Int_t, Float_t=3.3);
  void Alpha(Float_t , Float_t , Float_t *);
  void    Derivs(float x,float *,float *);
  Float_t GetVoltage() {return(Voltage);};
  void CalM( DStruct *, Double_t *);
  ClassDef(Dioda,1) 
};


#endif