Dioda

class Dioda : public TObject

    private:

      Double_t dEdx(Double_t)
       Float_t dEX(Double_t, Double_t*, Double_t*, Double_t = 0.5)
       Float_t PoEqSolve(Float_t)
          void rk4(float*, float*, int, float, float, float*)
       Float_t rtbis(float, float, float)

    public:

                      Dioda(const Dioda&)
                      Dioda(TF1*, Float_t = 50, Int_t = 50, Int_t = 301)
              virtual ~Dioda()
                 void Alpha(Float_t, Float_t, Float_t*)
                 void CalM(DStruct*, Double_t*)
       static TClass* Class()
                 void Derivs(float x, float*, float*)
      virtual TGraph* Draw(char*)
                 void Drift(Double_t sx, Double_t sy, Float_t charg, DStruct* seg, Int_t = 0, Float_t = 0)
                 void GetField()
                 void GetField(TF1*)
                 void GetRamoField()
                 void GetRamoField(TH1F* rf)
              Float_t GetVoltage()
      virtual TClass* IsA() const
                 void LaserV(Float_t*, Float_t*, Int_t, Float_t = 3.3)
                 void MipIR(Float_t*, Float_t*, Int_t)
                 void ResetRnd(Int_t seed)
                 void SetVoltage(Float_t V)
         virtual void ShowMembers(TMemberInspector& insp, char* parent)
         virtual void Streamer(TBuffer& b)
                 void StreamerNVirtual(TBuffer& b)

Data Members

    private:

         Int_t nx       Width Of The Doide
         Int_t ny       Thickness Of The Doide
       Float_t Voltage  Voltage
          TF1* Neff     effective dopping concentration 
      TRandom* ran      

    public:

       EField Real            electric field 
       EField Ramo            weighting field 
      TArrayF PhyPot          electric potential
      TArrayF PhyField        electric field 
        TH1F* pos             contribution of the holes to the total drift current
        TH1F* neg             contribution of the electrons  to the total drift current
        TH1F* sum             total drift current
        Trap* et              Trapping for electrons
        Trap* ht              Trapping for holes
        Int_t udregion        
        Int_t diff            Diffusion simulation (yes=1, no=0)
        Int_t MobMod          Mobility Model
        Int_t average         Average (over how many events)
      Float_t Temperature     Temperature
        Int_t trapping        Trapping simulation (yes=1, no=0)
      Float_t B               Magnetic field;
        Int_t material        material index - material=0 silicon, material = 1 diamond
        Int_t Multiplication  

Class Description

Constructor of the class Dioda:
		TF1 *x0 ; distribution of the Neff(x) given in 10**12! Note that p+ contact starts with x=301 and n+ at x=1
		Int_t x1 ; voltage applied in reverse direction
		Int_t x2 ; width of the diode in um. For the simulation it is not neccessary to put real dimensions
		Int_t x3 ; thickness in um

TArrayF PhyField(ny+2);
TArrayF PhyPot(ny+2);

Change made by GK on 16.10.2002

Set the field as defined in the potential function.

Draws potential "p" or  electric field "f"

Drift simulation for a point charge (charg)
starting from ( sx,sy)
DStruct *seg is the structure where the  the drift paths, drift times and induced cahrges are stored
	Int_t MobMod; mobility model
	Float_t B; magnetic field
    Float_t t0=start time ;

 The simulation of the drift for the minimum ionizing particles.
 A track is devided into Int_ div buckets. Each bucket is drifted in the field. The
 induced currents for each carrier is calculated as the sum  all buckets.
	Int_t MobMod; mobility model
	Float_t B; magnetic field

 The simulation of the drift for the red laser illumination!
 A penetration profile  is devided into Int_ div buckets. Each bucket is drifted in the field. The
 induced currents for each carrier is calculated as the sum  all buckets.

 The simulation of the drift for the minimum ionizing particles.
 A track is devided into Int_ div buckets. Each bucket is drifted in the field. The
 induced currents for each carrier is calculated as the sum  all buckets.
	Int_t MobMod; mobility model
	Float_t B; magnetic field

Inline Functions

               void SetVoltage(Float_t V)
               void ResetRnd(Int_t seed)
            Float_t GetVoltage()
            TClass* Class()
            TClass* IsA() const
               void ShowMembers(TMemberInspector& insp, char* parent)
               void Streamer(TBuffer& b)
               void StreamerNVirtual(TBuffer& b)
              Dioda Dioda(const Dioda&)